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ZXMP10A13F
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-100
?
?
?
?
?
?
-1.0
±100
V
μA
nA
I D = -250μA, V GS = 0V
V DS = -100V, V GS = 0V
V GS = ? 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 9 and 11)
Diode Forward Voltage (Note 9)
Reverse Recovery Time (Note 11)
Reverse Recovery Charge (Note 11)
V GS(th)
R DS (on)
g fs
V SD
t rr
Q rr
-2.0
?
?
?
?
?
?
?
1.2
-0.85
29
31
-4.0
1.0
1.45
?
-0.95
?
?
V
?
S
V
ns
nC
I D = -250μA, V DS = V GS
V GS = -10V, I D = -0.6A
V GS = -6.0V, I D = -0.5A
V DS = -15V, I D = -0.6A
T J = 25°C, I S = -0.75A, V GS = 0V
T J = 25°C, I F = -0.9A,
di/dt = 100A/ ? s
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
C iss
C oss
C rss
t D(on)
t r
t D(off)
t f
Q g
Q g
Q gs
Q gd
?
?
?
?
?
?
?
?
?
?
?
141
13.1
10.8
1.6
2.1
5.9
3.3
1.8
3.5
0.6
1.6
?
?
?
?
?
?
?
?
?
?
?
pF
ns
nC
nC
V DS = -50V, V GS = 0V
f = 1.0MHz
V DD = -50V, I D = -1.0A,
R G ? 6.0 ??? V GS = -10V
V DS = -50V, V GS = -5.0V,
I D = -0.6A
V DS = -50V, V GS = -10V,
I D = -0.6A
Notes:
9. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.
ZXMP10A13F
Document number: DS33596 Rev. 3 - 2
4 of 8
www.diodes.com
October 2013
? Diodes Incorporated
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